A 53–64-GHz SiGe up-conversion mixer with 4-GHz IF bandwidth

M. Ko, H. Rucker, W. Choi
{"title":"A 53–64-GHz SiGe up-conversion mixer with 4-GHz IF bandwidth","authors":"M. Ko, H. Rucker, W. Choi","doi":"10.1109/SMIC.2010.5422955","DOIUrl":null,"url":null,"abstract":"A Gilbert-cell direct up-conversion mixer is realized for 57-64-GHz unlicensed-band applications. The mixer with on-chip stacked inductors and LO, RF baluns is fabricated in 0.25-¿m SiGe:C BiCMOS technology. The fabricated mixer achieves conversion gain of 4 ± 1.5 dB and 5 ± 1 dB for upper and lower sideband, respectively, in frequency range from 53 to 64 GHz. The LO-to-RF isolation is higher than 30 dB. The mixer has IF bandwidth of 4 GHz, and the output-referred 1-dB compression point of -9.5 dBm. It occupies a chip area of 0.46 mm × 0.46 mm and consumes 10 mA with supply voltage of 2.5 V.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2010.5422955","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

Abstract

A Gilbert-cell direct up-conversion mixer is realized for 57-64-GHz unlicensed-band applications. The mixer with on-chip stacked inductors and LO, RF baluns is fabricated in 0.25-¿m SiGe:C BiCMOS technology. The fabricated mixer achieves conversion gain of 4 ± 1.5 dB and 5 ± 1 dB for upper and lower sideband, respectively, in frequency range from 53 to 64 GHz. The LO-to-RF isolation is higher than 30 dB. The mixer has IF bandwidth of 4 GHz, and the output-referred 1-dB compression point of -9.5 dBm. It occupies a chip area of 0.46 mm × 0.46 mm and consumes 10 mA with supply voltage of 2.5 V.
具有4 ghz中频带宽的53 - 64 ghz SiGe上转换混频器
为57-64 ghz免许可频段应用实现了吉尔伯特单元直接上转换混频器。具有片上堆叠电感和LO, RF平衡的混频器采用0.25-¿m SiGe:C BiCMOS技术制造。该混频器在53 ~ 64 GHz频率范围内,上边带和下边带的转换增益分别为4±1.5 dB和5±1 dB。低电平到射频隔离度高于30db。混频器的中频带宽为4ghz,输出参考的1db压缩点为-9.5 dBm。芯片面积为0.46 mm × 0.46 mm,功耗为10ma,电源电压为2.5 V。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信