Ultrafast photo-triggered field emission cathodes using massive, uniform arrays of nano-sharp high-aspect-ratio silicon structures

M. Swanwick, P. Keathley, F. X. Kärtner, L. Velásquez-García
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引用次数: 8

Abstract

We report the design, fabrication, and experimental characterization of a novel ultrafast optical field emission cathode comprised of a large and dense array of nano-sharp high-aspect-ratio single-crystal silicon columns (>100,000 tips, 4.6-million tips.cm-2). The cathode emits electrons with as little as 25 nJ and can produce up to 2.54 pC electron bunches per laser pulse when interacting with 35 fs 800 nm laser pulses with a 765 μm by 80 μm elliptical spot size. This is the first report of current measurements from Si tip arrays using photo-field emission; in addition, this is the first demonstration of a photocathode array that, depending on the energy of the laser pulses, can emit in the multi-photon or the tunnelling regime.
超高速光触发场发射阴极使用大量,均匀阵列的纳米锋利的高纵横比硅结构
我们报道了一种新型超快光场发射阴极的设计、制造和实验表征,该阴极由大量密集的纳米尖高纵横比单晶硅柱组成(>100,000个尖端,460万个尖端.cm-2)。当阴极与椭圆光斑尺寸为765 μm × 80 μm的35fs 800nm激光脉冲相互作用时,每个激光脉冲可产生高达2.54 pC的电子束。这是使用光场发射技术对硅尖端阵列进行当前测量的第一份报告;此外,这是光电阴极阵列的首次演示,根据激光脉冲的能量,可以在多光子或隧穿状态下发射。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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