{"title":"Stress measurements on TSVs and BEoL structures with high spatial resolution","authors":"D. Vogel, E. Auerswald, J. Auersperg, S. Rzepka","doi":"10.1109/CSTIC.2015.7153465","DOIUrl":null,"url":null,"abstract":"Knowledge and control of local stress development in BEoL stacks and nearby TSVs in advanced 3D integrated devices is a key to their thermo-mechanical reliability. The paper presents a combined simulation / measurement approach to evaluate stresses generated in the result of the TSV and BEoL stack manufacturing and 3D bonding processes. Stress measurement methods of high spatial resolution capability are briefly benchmarked. The application of microRaman and the new FIB based stress release techniques on TSV structures are demonstrated in some detail.","PeriodicalId":130108,"journal":{"name":"2015 China Semiconductor Technology International Conference","volume":"84 9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 China Semiconductor Technology International Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC.2015.7153465","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Knowledge and control of local stress development in BEoL stacks and nearby TSVs in advanced 3D integrated devices is a key to their thermo-mechanical reliability. The paper presents a combined simulation / measurement approach to evaluate stresses generated in the result of the TSV and BEoL stack manufacturing and 3D bonding processes. Stress measurement methods of high spatial resolution capability are briefly benchmarked. The application of microRaman and the new FIB based stress release techniques on TSV structures are demonstrated in some detail.