Failure analysis of low-ohmic shorts using lock-in thermography

K. Wadhwa, R. Schlangen, J. Liao, T. Ton, H. Marks
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引用次数: 5

Abstract

This paper will present the non-destructive Lock-in thermography (LIT) technique and its application in detecting low-ohmic power shorts in 28 nm GPU (Graphics processing units). LIT was successful in detecting power shorts within die and package down to 5 Ohms within seconds, leading to accurate and efficient root cause analysis.
低欧姆短路的锁相热成像失效分析
本文介绍了无损锁相热成像技术(LIT)及其在28nm图形处理器(GPU)低欧姆功率短路检测中的应用。LIT成功地在几秒钟内检测到芯片和封装内低至5欧姆的电源短路,从而实现准确有效的根本原因分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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