{"title":"Silicon epitaxial equipment and processing advances for bipolar base technology","authors":"J. Borland","doi":"10.1109/BIPOL.1992.274091","DOIUrl":null,"url":null,"abstract":"The author reviews silicon epitaxial equipment and processing advances that have contributed to epitaxial base bipolar technology. He addresses equipment design and surface cleaning requirements for a manufacturable low-temperature epitaxial process. Single-wafer and batch multiwafer equipment designs and processing, as well as possible clustered configurations for improved process capabilities, are discussed.<<ETX>>","PeriodicalId":286222,"journal":{"name":"Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1992.274091","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The author reviews silicon epitaxial equipment and processing advances that have contributed to epitaxial base bipolar technology. He addresses equipment design and surface cleaning requirements for a manufacturable low-temperature epitaxial process. Single-wafer and batch multiwafer equipment designs and processing, as well as possible clustered configurations for improved process capabilities, are discussed.<>