Dissipative transport in Multigate silicon nanowire transistors

Abstract

Most device simulation packages performing quantum transport modeling in thin body Multigate silicon nanowire devices at nanometer scales neglect the electron-phonon interaction, assuming devices operate in the ballistic regime. Here we perform a detailed study on dissipative quantum transport in multigate silicon nanowire transistor including acoustic and optical phonons in detail using non-equilibrium Green's function formalism in uncoupled mode-space approach. We find out that g-type phonons are the most important mechanisms contributing to current reduction in multigate nanowire both in subthreshold and above threshold region for silicon nanowire with 5nm film thickness. This crucial rule of g-type phonons stay active even for gate lengths below 20nm, which implies that ballistic models are inadequate to capture the device characteristics of nanometre devices.