5 GHz SiGe front-end components for WLAN applications

Abstract

5-GHz RF front-end components for IEEE 802.11a WLAN has been designed and fabricated using 0.5 /spl mu/m SiGe BiCMOS technology. The packaged LNA exhibited a noise figure of 2.5 dB with a gain of 16.5 dB at 5.15-5.35 GHz frequency range and an IIP3 of -10.5 dBm. The Rx/Tx mixers exhibited conversion gains of -2.1/-8.3 dB and IIP3s of 0.0/2.4 dBm, respectively. The DA achieved a very high gain of 26.5 dB and an OIP3 of 19.8 dBm. All the matching components were on-chip except the input DC block capacitors and LC output baluns. The effects of feedback resistance in the LNA on gain, input match, noise figure, and IP3 performance are investigated.