Optical characterization of silicon-on-insulator

Abstract

A study of the optical properties of SOI wafers can provide a quick, nondestructive, and reliable characterization technique. In this paper, we demonstrate a new optical technique which can simultaneously and unambiguously determine thickness, interface roughness (/spl sigma/), refractive index (n), and extinction coefficient (k) of thin films for SOI. The Forouhi-Bloomer dispersion equation for n and k is used to analyze measured reflectance spectra.