The influence of temperature on the tolerances of MOS-transistors in a 1 µm technology

Abstract

In a 1 µm Si-gate technology, channel length and temperature have a strong impact on the electrical device parameters. Experimental data on the influence of the channel length and the temperature on threshold voltage, breakdown voltage and subthreshold currents are presented for different channel dopings and S/D junction depths. The results are discussed with regard to the electrical device tolerances and to limitations in standard Si-gate technologies.