Analysis and Modeling for Reverse Body Bias Stress Impact on HCI Induced Degradation in n-Type EDMOS

2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2022-07-18 DOI:10.1109/IPFA55383.2022.9915712

Miao Cai, S. Leang, Kok Wai Chew, P. Tan, A. P. Herlambang, Chunxiang Zhu, Yongxin Guo

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引用次数: 1

Abstract

Reverse body bias (RBB) stress impact on high-voltage (HV) n-Type extended-drain MOSFET (EDMOS) has been investigated in this paper. Two-step degradation behavior of sub-threshold voltage (Vth) has been observed. At RBB stress lower than -1.25V, there is minor impact of RBB stress on hot carrier induced Vth shift. However, when the stress reaches around -2.5V, the Vth degradation increases significantly and has strong correlation with the RBB stress. Technology computer-aided design (TCAD) simulation shows that the Body/Source junction is reverse biased under large RBB stress therefore band to band tunneling current is generated at the interface near source side. High electric field enhances hot-electron trapping towards gate oxide in the channel region, resulting in large Vth shift after stressing. An equivalent reliability model has been developed based on this phenomenon, and the improved model fits well with the silicon data.

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反向体偏应力对n型EDMOS HCI诱导降解的影响分析与建模

本文研究了反向体偏置(RBB)应力对高电压n型延伸漏极MOSFET (EDMOS)的影响。观察了亚阈值电压(Vth)的两步退化行为。在RBB应力低于-1.25V时，RBB应力对热载流子诱导的Vth位移影响较小。然而，当应力达到-2.5V左右时，Vth衰减显著增加，且与RBB应力有很强的相关性。技术计算机辅助设计(TCAD)仿真表明，在大RBB应力作用下，体源结反向偏置，从而在源侧附近的界面处产生带间隧道电流。高电场增强了通道区栅极氧化物的热电子俘获，导致应力后的Vth位移较大。在此基础上建立了等效可靠性模型，改进后的模型与实测数据吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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