{"title":"Temperature stabilised tunable Gm-C filter for very low frequencies","authors":"P. Bruschi, G. Barillaro, F. Pieri, M. Piotto","doi":"10.1109/ESSCIR.2004.1356629","DOIUrl":null,"url":null,"abstract":"In this work, a continuous time low pass filter, with sub-Hz upper band limit, is presented. The circuit is based on a Gm-C approach, where the transconductance is stabilised against temperature variations over a wide temperature range (0-80/spl deg/C) using a DC feedback loop applied to a dummy transconductor (master). The very low transconductance values required to obtain low frequency singularities are achieved by means of multistage current division. A first order low pass prototype filter has been fabricated by means of the 1-/spl mu/m BCD3S process of STMicroelectronics.","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 30th European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2004.1356629","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
In this work, a continuous time low pass filter, with sub-Hz upper band limit, is presented. The circuit is based on a Gm-C approach, where the transconductance is stabilised against temperature variations over a wide temperature range (0-80/spl deg/C) using a DC feedback loop applied to a dummy transconductor (master). The very low transconductance values required to obtain low frequency singularities are achieved by means of multistage current division. A first order low pass prototype filter has been fabricated by means of the 1-/spl mu/m BCD3S process of STMicroelectronics.