Characterization of SOI Film Thickness, Oxide Thickness and Charges with C-V Measurement

Abstract

Capacitance-Voltage measurement is a crucial method to characterize and study the behavior of the device. In this work, the capacitance voltage characteristics of a partially depleted Silicon-On-Insulator MOSFET were analyzed and discussed. The important parameters like the gate oxide thickness, buried oxide thickness, silicon film thickness, fixed oxide charges and interface trapped charges were extracted from the capacitance voltage between the front gate and drain/source at different back gate voltage. The measured results were in good agreement with inline and XSEM result. The frequency dependency on the result is also observed and discussed in this paper.