{"title":"A 0.06mm2 ± 50mV range −82dB THD chopper VCO-based sensor readout circuit in 40nm CMOS","authors":"Chih-Chan Tu, Yu-Kai Wang, Tsung-Hsien Lin","doi":"10.23919/VLSIC.2017.8008558","DOIUrl":null,"url":null,"abstract":"A VCO-based sensor readout circuit is presented. It comprises a VCO-based integrator with counters, and a capactively-coupled feedback DAC, to form a 1st-order DSM with high input impedance and wide dynamic range for voltage sensors. Chopping is applied to suppress the flicker noise. The time-domain approach relaxes the voltage swing requirement compared to that of a Gm-C integrator, and thus area efficiency is achieved. The prototype is implemented in 40nm CMOS. It consumes 21μA under 1.2V supply. With a 100mVpp sinusoidal input, it achieves 74.9dB SNDR over 2 kHz BW and the THD is −82dB. This readout circuit is also measured with a Hall sensor to demonstrate its operation. The FoM and distortion achieves the state-of-the-art performance of VCO-based sensor readout circuits.","PeriodicalId":176340,"journal":{"name":"2017 Symposium on VLSI Circuits","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIC.2017.8008558","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 19
Abstract
A VCO-based sensor readout circuit is presented. It comprises a VCO-based integrator with counters, and a capactively-coupled feedback DAC, to form a 1st-order DSM with high input impedance and wide dynamic range for voltage sensors. Chopping is applied to suppress the flicker noise. The time-domain approach relaxes the voltage swing requirement compared to that of a Gm-C integrator, and thus area efficiency is achieved. The prototype is implemented in 40nm CMOS. It consumes 21μA under 1.2V supply. With a 100mVpp sinusoidal input, it achieves 74.9dB SNDR over 2 kHz BW and the THD is −82dB. This readout circuit is also measured with a Hall sensor to demonstrate its operation. The FoM and distortion achieves the state-of-the-art performance of VCO-based sensor readout circuits.