K. Pekmestzi, N. Axelos, I. Sideris, N. Moschopoulos
{"title":"A BISR Architecture for Embedded Memories","authors":"K. Pekmestzi, N. Axelos, I. Sideris, N. Moschopoulos","doi":"10.1109/IOLTS.2008.21","DOIUrl":null,"url":null,"abstract":"In this paper a BISR architecture for embedded memories is presented. The proposed scheme utilises a multiple bank cache-like memory for repairs. Statistical analysis is used for minimisation of the total resources required to achieve a very high fault coverage. Simulation results show that the proposed BISR scheme is characterised by high efficiency and low area overhead, even for high defect densities. On a 4 Mbit memory and an average number of 1024 memory defects per IC, a repair ratio of 100% and over 90% require less than 2% and 1% memory overhead respectively.","PeriodicalId":261786,"journal":{"name":"2008 14th IEEE International On-Line Testing Symposium","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 14th IEEE International On-Line Testing Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IOLTS.2008.21","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
In this paper a BISR architecture for embedded memories is presented. The proposed scheme utilises a multiple bank cache-like memory for repairs. Statistical analysis is used for minimisation of the total resources required to achieve a very high fault coverage. Simulation results show that the proposed BISR scheme is characterised by high efficiency and low area overhead, even for high defect densities. On a 4 Mbit memory and an average number of 1024 memory defects per IC, a repair ratio of 100% and over 90% require less than 2% and 1% memory overhead respectively.