The Effect of SnxAgCu and SnAgCuX on the Mechanical Drop Performance in Lead Free CSP Package

2007 8th International Conference on Electronic Packaging Technology Pub Date : 2007-08-01 DOI:10.1109/ICEPT.2007.4441434

J. Lee, P.C. Chen, Y. Lai

{"title":"The Effect of SnxAgCu and SnAgCuX on the Mechanical Drop Performance in Lead Free CSP Package","authors":"J. Lee, P.C. Chen, Y. Lai","doi":"10.1109/ICEPT.2007.4441434","DOIUrl":null,"url":null,"abstract":"In the study, one 14x14 lead free CSP BGA with 0.3 mm/0.5 mm ball diameter/pitch was adopted as test vehicle. The intermetallic compounds morphology evolution which can be generated when using SnxAgCu and SnAgCuX solder ball in combination with electrolytic NiAu-plated substrates was investigated during 150degC thermal aging, such as single layer SnNi IMC and complex layer SnNi/SnNiCu IMC in the interface through top and X-section view, respectively. In addition, the intensity of plate-like Ag3Sn IMC formation in the SnxAgCu solder bulkfrom 1 to 4%Ag was observed by SEM as well. The CSP BGA package with above combination was assembled to PC boards with OSP finish using Sn3Ag0.5Cu solder paste under 245degC peak temperature reflow. The test vehicle assembled was subject to mechanical drop test following JESD22-B111 to evaluate the solder joint integrity after zero and 150degC/250 hrs thermal aging. The effect of interfacial IMC morphology evolution and Ag3Sn intensity in solder bulk by x (Ag percentage) and X (forth element addition) on the mechanical drop performance will be concluded. Furthermore, one approaching in IMC microstructure control to overcome SnAgCu drop concern will be presented.","PeriodicalId":325619,"journal":{"name":"2007 8th International Conference on Electronic Packaging Technology","volume":"86 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 8th International Conference on Electronic Packaging Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEPT.2007.4441434","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

Abstract

In the study, one 14x14 lead free CSP BGA with 0.3 mm/0.5 mm ball diameter/pitch was adopted as test vehicle. The intermetallic compounds morphology evolution which can be generated when using SnxAgCu and SnAgCuX solder ball in combination with electrolytic NiAu-plated substrates was investigated during 150degC thermal aging, such as single layer SnNi IMC and complex layer SnNi/SnNiCu IMC in the interface through top and X-section view, respectively. In addition, the intensity of plate-like Ag3Sn IMC formation in the SnxAgCu solder bulkfrom 1 to 4%Ag was observed by SEM as well. The CSP BGA package with above combination was assembled to PC boards with OSP finish using Sn3Ag0.5Cu solder paste under 245degC peak temperature reflow. The test vehicle assembled was subject to mechanical drop test following JESD22-B111 to evaluate the solder joint integrity after zero and 150degC/250 hrs thermal aging. The effect of interfacial IMC morphology evolution and Ag3Sn intensity in solder bulk by x (Ag percentage) and X (forth element addition) on the mechanical drop performance will be concluded. Furthermore, one approaching in IMC microstructure control to overcome SnAgCu drop concern will be presented.

查看原文本刊更多论文

SnxAgCu和SnAgCuX对无铅CSP封装机械跌落性能的影响

在研究中，我们选择了一个14 × 14无铅CSP BGA，球直径/节距为0.3 mm/0.5 mm。在150℃热时效过程中，分别从顶部和x面观察SnxAgCu和SnAgCuX焊料球与电解镀niau衬底结合时，界面产生的单层SnNi IMC和复合SnNi/SnNiCu IMC等金属间化合物的形貌演变。此外，SEM还观察到在1% ~ 4%Ag的SnxAgCu钎料块中，片状Ag3Sn IMC的形成强度。将上述组合的CSP BGA封装在245c峰值温度回流下，用Sn3Ag0.5Cu焊膏进行OSP光面组装到PC板上。装配好的试验车按照JESD22-B111进行机械跌落试验，评估焊点在零和150℃/250小时热老化后的完整性。总结了x (Ag百分比)和x(第四元素添加量)对钎料块中界面IMC形貌演变和Ag3Sn强度的影响。此外，本文还提出了一种克服SnAgCu掉落问题的IMC微结构控制方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2007 8th International Conference on Electronic Packaging Technology

自引率

0.00%

发文量