The enhanced optical property of chemical passivated n type GaSb

2012 International Conference on Optoelectronics and Microelectronics Pub Date : 2012-10-02 DOI:10.1109/ICOOM.2012.6316208

Bo Wang, Zhipengwei, Mei Li, X. Fang, Rui Deng, Xian Gao, Y. Zou, P. Lu, Guojun Liu, Xiao-hui Ma

引用次数: 0

Abstract

In the paper, Te-doped n type GaSb was passivated by (NH4)2S, the optical and surface properties of passivated GaSb were investigated by PL and AFM. After passivation treatment, the luminescence intensity of GaSb was enhanced. The passivation time would also affect luminescence intensity and the surface smooth of GaSb.

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化学钝化n型GaSb的光学性能增强

本文采用(NH4)2S钝化te掺杂的n型GaSb，用PL和AFM研究了钝化后的GaSb的光学性质和表面性质。钝化处理后，GaSb的发光强度增强。钝化时间也会影响GaSb的发光强度和表面光洁度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2012 International Conference on Optoelectronics and Microelectronics

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