Effective mobility analysis of n- and p-types SOI junctionless nanowire transistors

Abstract

This paper reports the behavior of the effective mobility of n- and p-type SOI Trigate Junctionless Nanowire Transistors with different doping concentrations and channel widths down to 20 nm-wide devices. It is shown that the mobility of extremely narrow devices can overcome the bulk silicon mobility independently of the device type. The increase in the maximum mobility observed in narrow devices seems to be more pronounced for heavier doped devices.