Insulator surface flashover with UV and plasma background and external magnetic field

F. Hegeler, H. Krompholz, L. Hatfield, M. Kristiansen
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Abstract

Surface flashover often sets the limit on the maximum voltage of a system in vacuum. UV irradiation and/or plasma will further decrease the flashover potential. This experiment investigates the UV and plasma induced dielectric surface flashover, emphasizes the early phase of breakdown, and uses external magnetic fields to increase the surface flashover potential. In our experimental apparatus, a dc voltage up to 60 kV or a voltage pulse (up to 100 kV with 200 ns duration) is applied to the test gap. The geometry of all interconnecting lines and of the discharge chamber is coaxial and the impedances are closely matched. The current, voltage, and soft X-rays are recorded. The plasma is generated by an electron cyclotron resonance plasma source and the UV radiation originates from a UV enhanced dc Xenon arc lamp. External magnetic fields influence the current in the pre-flashover phase. With a magnetic flux density of only 30 mT, the flashover potential of a UV induced breakdown increases by up to a factor of 4. With a plasma background, the duration of an applied voltage pulse can be increased by a factor of 2 without causing flashover.
绝缘子表面闪络与紫外线和等离子体背景和外磁场
表面闪络常常限定真空系统的最大电压。紫外线照射和/或等离子体将进一步降低闪络电位。本实验研究了紫外和等离子体诱导的介质表面闪络,强调击穿的早期阶段,并利用外加磁场增加表面闪络电位。在我们的实验装置中,将高达60千伏的直流电压或电压脉冲(高达100千伏,持续时间为200毫秒)施加于测试间隙。所有连接线和放电室的几何形状是同轴的,阻抗是紧密匹配的。记录电流、电压和软x射线。等离子体由电子回旋共振等离子体源产生,紫外线辐射来自紫外增强直流氙弧灯。外部磁场影响闪络前阶段的电流。在磁通量密度仅为30mt的情况下,紫外线诱发击穿的闪络电位增加了多达4倍。在等离子体背景下,施加电压脉冲的持续时间可以增加2倍而不会引起闪络。
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