Impact of LER on BEOL dielectric reliability: A quantitative model and experimental validation

2009 IEEE International Interconnect Technology Conference Pub Date : 2009-06-01 DOI:10.1109/IITC.2009.5090395

Z. Tokei, P. Roussel, M. Stucchi, J. Versluijs, I. Ciofi, L. Carbonell, G. Beyer, A. Cockburn, M. Agustin, K. Shah

引用次数: 17

Abstract

For the first time we provide a model for describing the LER induced BEOL TDDB lifetime reduction. The model was validated on 50nm ½ pitch copper damascene lines embedded into a k=2.5 low-k material.

查看原文本刊更多论文

LER对BEOL介质可靠性的影响:一个定量模型和实验验证

我们首次提供了一个描述LER诱导的BEOL TDDB寿命降低的模型。该模型在嵌入k=2.5低k材料中的50nm½螺距铜damascene线上进行了验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2009 IEEE International Interconnect Technology Conference

自引率

0.00%

发文量