SCR device for on-chip ESD protection in RF power amplifier

Abstract

To protect a radio-frequency (RF) power amplifier from electrostatic discharge (ESD) damages, a low-capacitance, high-robust, and good-latchup-immune ESD protection device was proposed in this work. The proposed design has been realized in a compact structure in a 65-nm CMOS process. Experimental results of the test devices have been successfully verified, including RF performances, I-V characteristics, and ESD robustness.