{"title":"A LVTSCR-Based Compact Structure for Latch-up Immune","authors":"Songyan Wang, X. Fan, Zhihua Zhu, Yingtao Zhang, Ruike Chen, J. Liou","doi":"10.1109/ASICON52560.2021.9620404","DOIUrl":null,"url":null,"abstract":"In this paper, an improved low-voltage-triggered silicon-controlled rectifier with an embedded shunt path (LVTSCR-ESP) for latch-up immune is proposed. Multi-current pulses are applied to devices, mimicking human body model (HBM) by using Sentaurus-TCAD. The results reveal that the proposed structure, compared with conventional LVTSCR, has adjustable holding voltage, lower trigger voltage and good electrostatic discharge (ESD) robustness. In addition, the working mechanisms are also investigated, and the proposed device as the ESD cell, possessing many advantages, is more benefit for the internal circuit and has no risk of latch-up.","PeriodicalId":233584,"journal":{"name":"2021 IEEE 14th International Conference on ASIC (ASICON)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 14th International Conference on ASIC (ASICON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASICON52560.2021.9620404","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, an improved low-voltage-triggered silicon-controlled rectifier with an embedded shunt path (LVTSCR-ESP) for latch-up immune is proposed. Multi-current pulses are applied to devices, mimicking human body model (HBM) by using Sentaurus-TCAD. The results reveal that the proposed structure, compared with conventional LVTSCR, has adjustable holding voltage, lower trigger voltage and good electrostatic discharge (ESD) robustness. In addition, the working mechanisms are also investigated, and the proposed device as the ESD cell, possessing many advantages, is more benefit for the internal circuit and has no risk of latch-up.