{"title":"Enabling energy efficient protocol processing for passive RFID sensors using sub/near-threshold circuit","authors":"R. Liao, R. Ahmed, C. Hutchens, R. Rennaker","doi":"10.1109/S3S.2013.6716527","DOIUrl":null,"url":null,"abstract":"Recent research trend of passive RFID based sensors has posed stringent low power requirement for energy efficient communication, which can be addressed by sub/near-Vt operation with standard CMOS process. This paper discusses new design challenges under scaled voltages and presents critical building blocks for low power protocol processing. Two supply viltages -0.45V and 0.7V are selected for powering digital and analog circuits which process EPC Gen-2 physical layer data. The design was fabricated in 180nm CMOS process and probe station measurement are reported.","PeriodicalId":219932,"journal":{"name":"2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/S3S.2013.6716527","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Recent research trend of passive RFID based sensors has posed stringent low power requirement for energy efficient communication, which can be addressed by sub/near-Vt operation with standard CMOS process. This paper discusses new design challenges under scaled voltages and presents critical building blocks for low power protocol processing. Two supply viltages -0.45V and 0.7V are selected for powering digital and analog circuits which process EPC Gen-2 physical layer data. The design was fabricated in 180nm CMOS process and probe station measurement are reported.