A mmW low power VCO with high tuning range in 28nm FDSOI CMOS technology

M. Vallet, O. Richard, Y. Deval, D. Belot
{"title":"A mmW low power VCO with high tuning range in 28nm FDSOI CMOS technology","authors":"M. Vallet, O. Richard, Y. Deval, D. Belot","doi":"10.1109/ICECS.2014.7050037","DOIUrl":null,"url":null,"abstract":"A 28nm FDSOI CMOS low power VCO working at 40 GHz frequency is presented in this paper. The VCO core only consumes 6mW from a 1 V supply voltage. A wide tuning range of 18.5 % from 38.3 GHz to 46.1 GHz is reached with a tuning voltage from 0 to 1 V. A phase noise higher than -120.5 dBc/Hz at 10 MHz offset has been observed after post-layout simulations. A variable inductance approach has been chosen in order to maintain a sufficiently low phase noise despite significant constraints caused by the advanced technology nodes and the large tuning range needed.","PeriodicalId":133747,"journal":{"name":"2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2014.7050037","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

A 28nm FDSOI CMOS low power VCO working at 40 GHz frequency is presented in this paper. The VCO core only consumes 6mW from a 1 V supply voltage. A wide tuning range of 18.5 % from 38.3 GHz to 46.1 GHz is reached with a tuning voltage from 0 to 1 V. A phase noise higher than -120.5 dBc/Hz at 10 MHz offset has been observed after post-layout simulations. A variable inductance approach has been chosen in order to maintain a sufficiently low phase noise despite significant constraints caused by the advanced technology nodes and the large tuning range needed.
基于28nm FDSOI CMOS技术的mmW低功率压控振荡器
介绍了一种工作在40ghz频率下的28nm FDSOI CMOS低功耗压控振荡器。VCO核心仅从1v电源电压中消耗6mW。在0 ~ 1v的调谐电压下,可达到38.3 ~ 46.1 GHz的宽调谐范围18.5%。在布局后的模拟中,在10mhz偏置下观察到高于-120.5 dBc/Hz的相位噪声。尽管由于先进的技术节点和所需的大调谐范围造成了重大限制,但为了保持足够低的相位噪声,选择了可变电感方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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