Improvement in throughput of silicon epitaxial process by using in-line moisture monitoring

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI:10.1109/ISSM.2000.993692

H. Hasegawa, T. Yamaoka, M. Hamano, Y. Ishihara, T. Satoh

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Abstract

In epitaxial process, halide and hydrogen halide gases are used as a source gas or chamber cleaning gas. These gases are very corrosive in the presence of moisture. Hence, metal contamination will be very severe problem, if moisture get into epitaxial process. So we investigated the behavior of moisture gotten into the epitaxial process chamber and the relationship between moisture concentration and metal contamination. As a result, they became clear that moisture in the process chamber is promptly adsorbed on the inner surface of the process chamber and it does not leave easily except for HCl gas atmosphere, and that metal contamination level relates to moisture concentration. Therefore, the moisture monitoring and controlling can reduce the frequency of ex-situ metal inspection such as SIMS, SPV and DLTS. The improvement of the throughput is also expected because of inspection time reduction and quick startup after maintenance. The moisture monitoring with spectrometer could be very effective on both cost and quality.

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利用在线水分监测提高硅外延工艺的产量

在外延工艺中，卤化物和卤化氢气体被用作源气体或室清洗气体。这些气体在有水分的情况下具有很强的腐蚀性。因此，如果湿气进入外延过程，金属污染将是非常严重的问题。因此，我们研究了外延加工腔内水分的行为以及水分浓度与金属污染的关系。结果，他们清楚地认识到，工艺室中的水分被迅速吸附在工艺室的内表面上，除了HCl气体外，它不易离开，并且金属污染水平与水分浓度有关。因此，水分监测和控制可以减少SIMS、SPV和DLTS等金属非原位检测的频率。由于减少了检查时间和维修后的快速启动，也有望提高吞吐量。用光谱仪进行水分监测在成本和质量上都是非常有效的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)

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