Optimising energetic porous silicon performance

M. Plessis
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Abstract

With the scaling down of integrated circuit silicon technology feature sizes, more functionality can be integrated onto a silicon chip, leading to the “More than Moore” concept. The porous silicon technology opened the door to several new novel applications, one of which is porous silicon being used as an energetic material. Several applications in the field of sensors and actuators are envisaged and the aim of this paper is to identify some of the optimal porous silicon and oxidiser parameters for high energy output. Of importance is the porosity and pore size of the porous silicon, as well as the type of oxidiser and filling of the pores with the oxidiser. The oxidiser NaClO4 was found to be the most energetic of the three oxidisers (Gd(NO 3 ) 3 , S and NaClO 4 ) investigated. Of more importance, it was found that for the most energetic reaction, the optimal pore size should be in the range 3 to 4 nm.
优化含能多孔硅性能
随着集成电路硅技术特征尺寸的缩小,更多的功能可以集成到硅芯片上,从而产生了“超越摩尔”的概念。多孔硅技术为许多新的应用打开了大门,其中之一就是多孔硅被用作一种高能材料。设想了传感器和执行器领域的几种应用,本文的目的是确定一些最佳的多孔硅和氧化剂参数,以实现高能量输出。重要的是多孔硅的孔隙率和孔径,以及氧化剂的类型和用氧化剂填充孔隙。在所研究的三种氧化剂(Gd(no3) 3、S和NaClO4)中,氧化钠(NaClO4)的能量最高。更重要的是,我们发现对于最具能量的反应,最佳孔径应在3 ~ 4 nm范围内。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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