Insights into device and material origins and physical mechanisms behind cross temperature in 3D NAND

Abstract

Continuation of the scaling and increase of the storage density of the 3D NAND requires minimization and control of variability sources. Among the various reliability challenges, cross-temperature phenomena are considered as one of the reliability limiting factors of state-of-the-art 3D NAND devices. Starting from hypothesis that cross temperature effects are dominated by polycrystalline channel and retention loss at elevated temperature, we: (1) capture and quantify cell-to-cell variability sources within the Page; (2) provide first material and device driven insight (focusing on polyslicon) and its impact on cross-temperature along the Page and String and (3) link them with fail-bits of TLC-encoded 3D NAND.