Impacts of Channel Doping on NBTI Reliability and Variability in Nanoscale FinFETs

Abstract

In this paper, the channel doping concentration (Nch) dependence of negative bias temperature instability (NBTI) reliability and variability is comprehensively studied using ‘atomistic’ TCAD simulations. The ΔVth distributions and current density distributions at different Nch are investigated. It is helpful for understanding of NBTI degradation in nanoscale devices.