{"title":"CMOS inverter-based voltage and current references in short channel technologies","authors":"K. Raghunandan, T. R. Viswanathan","doi":"10.1109/DCAS.2014.6965322","DOIUrl":null,"url":null,"abstract":"This paper presents the design of voltage and current references in short channel CMOS technologies operating with Low Supply Voltages (<; 1.2V). The objective is to design simple circuits having good Power Supply Rejection (PSR) with minimal power consumption and area which are easy to re-use. The references are based on class AB CMOS inverters and current mirrors. A voltage reference is obtained as a scaled sum of two diode voltages carrying different current densities so that it is equal to a fraction of the bandgap voltage of silicon. The current reference is obtained by calibrating a simple current source using the bandgap voltage and a switched capacitor conductance clocked by the system clock.","PeriodicalId":138665,"journal":{"name":"2014 IEEE Dallas Circuits and Systems Conference (DCAS)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE Dallas Circuits and Systems Conference (DCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DCAS.2014.6965322","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper presents the design of voltage and current references in short channel CMOS technologies operating with Low Supply Voltages (<; 1.2V). The objective is to design simple circuits having good Power Supply Rejection (PSR) with minimal power consumption and area which are easy to re-use. The references are based on class AB CMOS inverters and current mirrors. A voltage reference is obtained as a scaled sum of two diode voltages carrying different current densities so that it is equal to a fraction of the bandgap voltage of silicon. The current reference is obtained by calibrating a simple current source using the bandgap voltage and a switched capacitor conductance clocked by the system clock.