Properties of Films of Cr-Co-Cu-Fe-Ni and Cr-Co-Cu-Fe-Mn-Ni Alloys Deposited by Magnetron Sputtering

L. Shaginyan, V. Britun, V. Gorban, N. Krapivka, S. Firstov, A. V. Kotko, N. Danilenko
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Abstract

The goal of our investigation is to find out the relations between composition and structure of magnetron sputtered CoCrCuFeNi and CrCoCuFeMnNi alloy films and technological parameters - the magnetron discharge current (Id)and the bias voltage applied to the substrate (Ub)that provides the ion bombardment (IB)of growing film. It was found that the films of both of the alloys are nanocrystalline and crystallize in two-phase (FCC and BCC)solid solutions. IB of the films of both compositions in the range of Ei=(0–300 eV)affects its composition and structure. The films deposited under IB with Ei ~300 eV are markedly depleted in Cu for CoCrCuFeNi or both in Cu and Mn for CrCoCuFeMnNi alloys, while the composition of films deposited without IB coincides with that of the target. An increase of the energy delivering to the growth surface (an increase of Idand/or Ub)promotes the surface temperature rise that leads to the grain size growth and film texturing. A noticeable decrease of the BCC phase volume in films deposited at Ub= −300 V was also observed. Films formed under IB with Ei~100 eV possess maximal microhardness.
磁控溅射制备Cr-Co-Cu-Fe-Ni和Cr-Co-Cu-Fe-Mn-Ni合金薄膜的性能
我们的研究目的是找出磁控溅射CoCrCuFeNi和CrCoCuFeMnNi合金薄膜的组成和结构与工艺参数-磁控放电电流(Id)和施加在衬底上的偏压(Ub)提供离子轰击(IB)生长薄膜的关系。结果表明,两种合金的薄膜均为纳米晶,并在两相(FCC和BCC)固溶体中结晶。两种成分薄膜在Ei=(0 ~ 300 eV)范围内的IB值影响其组成和结构。Ei ~300 eV在IB条件下沉积的CoCrCuFeNi合金薄膜中Cu元素明显减少,CrCoCuFeMnNi合金薄膜中Cu元素和Mn元素同时减少,而没有IB条件下沉积的薄膜的成分与靶相一致。传递到生长表面的能量的增加(Idand/或Ub的增加)促进了表面温度的升高,从而导致晶粒尺寸的增长和薄膜的织构。在Ub= - 300 V下沉积的薄膜中,BCC相体积明显减小。在IB下形成的薄膜具有最大的显微硬度,其Ei~100 eV。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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