Characterization for novel non-traditional CMOS inverter composed of a junctionless NMOSFET and a gated N+-N−-P transistor

Abstract

We present a non-traditional CMOS inverter composed a junctionless (JL) NMOSFET and an N⁺-N⁻-P transistor which with simple process and high integration density in this paper. In the non-traditional CMOS inverter the JL NMOSFET serves as driver and the N⁺-N⁻-P transistor serves as load, respectively. Based on the measurement date of the N⁺-N⁻-P transistor published, we draw the load line of the non-traditional CMOS inverter and we found out that the N⁺-N⁻-P transistor can be used in the COMS circuit to advance the issues of the conventional CMOS today. Besides, the area reduced more than 46.1% are also be achieved.