High efficient 635nm resonant-cavity light-emitting diodes with modified electron stopped layers

Abstract

In this work, the analysis of thermal, electrical and optical properties of 635 nm InGaAlP resonant-cavity light-emitting diodes is presented. We show that including the electron stop layer in both side of active layer improves the efficiency of such device due to increasing the electron capture efficiency in the quantum wells. Theoretical analysis is proved by experimental work.