Low-voltage metal-fuse technology featuring a 1.6V-programmable 1T1R bit cell with an integrated 1V charge pump in 22nm tri-gate process

Abstract

This work introduces the first high-volume manufacturable metal-fuse technology in a 22nm tri-gate high-k metal-gate CMOS process. A high-density array featuring a 16.4μm2 1T1R bit cell is presented that delivers a record low program voltage of 1.6V. This low-voltage operability allows the array to be coupled with logic-voltage power delivery circuits. A charge pump voltage doubler operating on a 1V voltage rail is demonstrated in this paper with healthy fusing yield.