A comparative study of physical and subcircuit models for MOS-gated power devices

Abstract

We have developed a new extensive model library for MOS-gated power devices aimed for CAD and the simulation of power integrated circuits and power electronics. Comparisons between the compact physical models implemented in an open circuit simulator, Aplac, and semiempirical SPICE compatible subcircuit models show that the accuracy of the subcircuit models approaches that of the physical models, if the components of the subcircuit are modelled properly.