100 GHz SOI gap waveguides

S. Rahiminejad, A. A. Brazález, H. Raza, E. Pucci, S. Haasl, P. Kildal, P. Enoksson
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引用次数: 6

Abstract

Two gap waveguide technologies, groove and ridge, are presented here for F-band applications. Three different groove gap waveguide devices and four different ridge gap waveguide devices have been fabricated. All of them were micromachined to achieve the feature size required for the frequency band and fabricated in a single process using SOI wafers. The two types provide a more robust coupling to standard waveguides and high frequency probes. Measurements for most of the devices are shown in this paper, showing robust measurements and good agreement with simulations. More measurements need to be done but the initial ones show the promise both in the manufacturing technique and the coupling.
100ghz SOI隙波导
本文介绍了两种适用于f波段的缝隙波导技术:沟槽波导和脊波导。制备了三种不同的槽隙波导器件和四种不同的脊隙波导器件。所有这些都经过微机械加工,以达到频段所需的特征尺寸,并使用SOI晶圆在单一工艺中制造。这两种类型提供了一个更强大的耦合标准波导和高频探头。本文给出了大多数器件的测量结果,显示了鲁棒性测量结果,与仿真结果吻合良好。需要做更多的测量,但最初的测量显示了制造技术和耦合的前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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