Yuanbo Ma, Bin Li, Zhaohui Wu, Haigang Wu, Zhijian Chen
{"title":"A Co-simulation Method of Power Amplifier for Reliability Optimization","authors":"Yuanbo Ma, Bin Li, Zhaohui Wu, Haigang Wu, Zhijian Chen","doi":"10.1109/EDSSC.2018.8487110","DOIUrl":null,"url":null,"abstract":"An optimized design method for the reliability of power amplifier, based on the electric and thermal co-simulation is proposed. Different from traditional methods focused on device performance and separated from electrical parameters, it can build up a closed-loop feedback between temperature distribution of multi-heat source and the distortion of electrical parameters varied with temperature. Certified by the experimental results of CMOS and GaAs HBT process power amplifiers, the reliability can be optimized with minimizing area cost after several iterations.","PeriodicalId":279745,"journal":{"name":"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2018.8487110","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
An optimized design method for the reliability of power amplifier, based on the electric and thermal co-simulation is proposed. Different from traditional methods focused on device performance and separated from electrical parameters, it can build up a closed-loop feedback between temperature distribution of multi-heat source and the distortion of electrical parameters varied with temperature. Certified by the experimental results of CMOS and GaAs HBT process power amplifiers, the reliability can be optimized with minimizing area cost after several iterations.