Tight-binding study of Γ-L bandstructure engineering for ballistic III–V nMOSFETs

Abstract

A major concern for III–V nMOSFETs is the degradation of ION due to low density of states and spillover of the charge from high-mobility Γ-valley to low-mobility L-valley at high sheet charge density. In this paper, we study these Γ-L bandstructure effects for ultrathin-body InxGa1−xSb nMOSFETs with varying stoichiometry using tight-binding and ballistic transport model.