A 65-nm SOTB implementation of a physically unclonable function and its performance improvement by body bias control

Y. Hori, T. Katashita, Y. Ogasahara
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引用次数: 2

Abstract

This study explores the feasibility of using silicon-on-thin-buried oxide (SOTB) devices for physically unclonable functions (PUFs) and the effect of body biasing of the SOTB on the performance of a PUF. The low variability of the SOTB is desirable for ultra-low-power operation of the circuit, whereas it can cause performance decrease in a PUF, because a PUF generates a unique chip ID by exploiting the device variability. This paper reports the feasibility of using a reduced-variability SOTB for a PUF for the first time. We fabricated arbiter PUFs in the 65-nm SOTB process and measured the PUF responses for core voltages in the range of 0.4–0.8 V and body bias in the range of −0.5–0.5 V. We demonstrated that the SOTB can be used to implement a PUF successfully, and its performance can be improved by adjusting the body bias of the SOTB.
一种物理不可克隆功能的65纳米SOTB实现及其通过体偏置控制的性能改进
本研究探讨了将薄埋氧化硅(SOTB)器件用于物理不可克隆功能(PUF)的可行性,以及SOTB的体偏置对PUF性能的影响。SOTB的低可变性对于电路的超低功耗操作是理想的,而它可能导致PUF的性能下降,因为PUF通过利用器件可变性生成唯一的芯片ID。本文首次报道了在PUF中使用降低可变性SOTB的可行性。我们在65nm SOTB工艺中制作了仲裁PUF,并测量了核心电压在0.4-0.8 V范围内和体偏置在- 0.5-0.5 V范围内的PUF响应。我们证明了SOTB可以成功地用于实现PUF,并且可以通过调整SOTB的体偏置来提高其性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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