A thermal field oxidation process for ionizing radiation hardness

Proceedings of 4th International Conference on Solid-State and IC Technology Pub Date : 1995-10-24 DOI:10.1109/ICSICT.1995.503384

Yuanfu Zhao, Yuhong Hu, Rongliang Yan, Guoqiang Zhang, Diyuan Ren

引用次数: 1

Abstract

A thermal field oxidation process for ionizing radiation hardness has been described. It is shown that the failure threshold of 54HC04, in which the hardened thermal field process has been applied, is excess to 1/spl times/10/sup 6/rad(Si).

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一种电离辐射硬度的热场氧化工艺

描述了电离辐射硬度的热场氧化过程。结果表明，采用硬化热场处理的54HC04合金的失效阈值超过了1/ sp1次/10/sup 6/rad(Si)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of 4th International Conference on Solid-State and IC Technology

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