A 2.1GHz 1.3V 5mW programmable Q-enhancement LC bandpass biquad in 0.35/spl mu/m CMOS

Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285) Pub Date : 2002-08-07 DOI:10.1109/CICC.2002.1012815

Fikret Duelgel, E. Sánchez-Sinencio, J. Silva-Martínez

引用次数: 4

Abstract

A 2.1GHz, 1.3V, 5mW, fully integrated Q enhancement LC bandpass biquad programmable in peak gain, Q and f/sub o/ is implemented in 0.35/spl mu/m standard CMOS. The Q tuning is through an adjustable negative conductance generator. Measured frequency tuning (through varactors) is 13% around 2.1GHz. The filter sinks 4mA from 1.3V providing a Q of 40 at 2.19GHz with 1dB compression DR of 38dB and SFDR of 33dB. The silicon area is 0.1mm/sup 2/.

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2.1GHz 1.3V 5mW可编程q增强LC带通双路电路，0.35/spl mu/m CMOS

一个2.1GHz, 1.3V, 5mW，全集成Q增强LC带通双可编程的峰值增益，Q和f/sub / 0 /在0.35/spl mu/m标准CMOS中实现。Q调谐是通过一个可调的负电导发生器。测量频率调谐(通过变容管)在2.1GHz左右为13%。该滤波器从1.3V吸收4mA，在2.19GHz时Q为40,1dB压缩DR为38dB, SFDR为33dB。硅面积为0.1mm/sup 2/。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)

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