Oscillation wavelength shift characteristics of a semiconductor laser in a magnetic field -Observation using a beat note-

Takashi Sato, S. Matsuda, K. Shibata, Shigeki Yamamoto, M. Ohkawa, Takeo Maruyama, M. Shimba
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Abstract

Since the development of the first semiconductor lasers, we know that the oscillation wavelength of a semiconductor laser depends on injection current, laser temperature and magnetic field. Among these factors, injection current and laser temperature are the principal means by which to control the wavelength of laser diodes, in many practical applications. The wavelength shift of laser diodes subjected to strong magnetic fields in low temperature was reported from a physical point of view in the early 60’s[1]. Even after such work was further progressed, little time was spent actually testing semiconductor lasers in a magnetic field except for the spin-flip Raman[2] and quantum well[3] lasers.
半导体激光器在磁场中的振荡波长移特性。用拍音观察
从第一台半导体激光器的研制开始,我们就知道半导体激光器的振荡波长与注入电流、激光温度和磁场有关。在这些因素中,在许多实际应用中,注入电流和激光温度是控制激光二极管波长的主要手段。60年代初从物理角度报道了低温强磁场作用下激光二极管的波长位移[1]。即使在这项工作取得进一步进展之后,除了自旋翻转拉曼[2]和量子阱[3]激光器外,很少有时间在磁场中实际测试半导体激光器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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