Wafer-level light emitting diode (WL-LED): An innovative approach for cost-effective very high power lighting

2014 11th China International Forum on Solid State Lighting (SSLCHINA) Pub Date : 2014-11-01 DOI:10.1109/SSLCHINA.2014.7127240

Y. Cai, Y. Zhang, F. Xu, D. Zhao, H. J. Huang, W. Wang, J. W. Xu, G. Shi, B. S. Zhang

引用次数: 1

Abstract

A very high power wafer level light emitting diode (WL-LED) has been successfully fabricated on 2 inches InGaN/GaN epi-wafer based on high voltage design. The maximum light output power (LOP) was measured to be 157W with an external quantum efficiency (EQE) of 24%.

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晶圆级发光二极管(WL-LED):一种具有成本效益的高功率照明创新方法

基于高电压设计，在2英寸InGaN/GaN外延晶圆上成功制备了大功率晶圆级发光二极管(WL-LED)。最大光输出功率(LOP)为157W，外量子效率(EQE)为24%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2014 11th China International Forum on Solid State Lighting (SSLCHINA)

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