Novel current re-distribution structure for improved and easy-to-manufacturing 24V LDMOS

Cheng-Hua Lin, Yan-Liang Ji, C. Jan, C. W. Hu, K. Chang, H. Kao
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引用次数: 3

Abstract

This paper presents a novel structure combined POLY-CAP and P+ Cut Edge which are implemented in s.LDMOS (switching LDMOS) to avoid trapping at active region. s.LDMOS is widely used in SMPS (Switch Mode Power Supply) which requires reliable lifetime and stable turn-on performance. P+ Cut Edge could perfectly solve hump effect while turn-on; with Drain side POLY-CAP, lifetime could be drastically improved under NCS (Non-Conductive Stress) to sustain DC 10 years with comparable BV (Breakdown Voltage) and HCI (Hot Carrier Injection) lifetime.
新型电流再分配结构,用于改进和易于制造的24V LDMOS
本文提出了一种将POLY-CAP和P+ Cut Edge相结合的新颖结构,该结构实现在s.l LDMOS(开关LDMOS)中,以避免有源区捕获。ldmos广泛应用于需要可靠寿命和稳定导通性能的开关电源(SMPS)。P+ Cut Edge能完美解决开机时的驼峰效应;使用漏侧POLY-CAP,在NCS(非导电应力)下的寿命可以大大提高,在BV(击穿电压)和HCI(热载流子注入)寿命相当的情况下,可以维持直流10年。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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