Cheng-Hua Lin, Yan-Liang Ji, C. Jan, C. W. Hu, K. Chang, H. Kao
{"title":"Novel current re-distribution structure for improved and easy-to-manufacturing 24V LDMOS","authors":"Cheng-Hua Lin, Yan-Liang Ji, C. Jan, C. W. Hu, K. Chang, H. Kao","doi":"10.1109/ISPSD.2018.8393661","DOIUrl":null,"url":null,"abstract":"This paper presents a novel structure combined POLY-CAP and P+ Cut Edge which are implemented in s.LDMOS (switching LDMOS) to avoid trapping at active region. s.LDMOS is widely used in SMPS (Switch Mode Power Supply) which requires reliable lifetime and stable turn-on performance. P+ Cut Edge could perfectly solve hump effect while turn-on; with Drain side POLY-CAP, lifetime could be drastically improved under NCS (Non-Conductive Stress) to sustain DC 10 years with comparable BV (Breakdown Voltage) and HCI (Hot Carrier Injection) lifetime.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2018.8393661","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper presents a novel structure combined POLY-CAP and P+ Cut Edge which are implemented in s.LDMOS (switching LDMOS) to avoid trapping at active region. s.LDMOS is widely used in SMPS (Switch Mode Power Supply) which requires reliable lifetime and stable turn-on performance. P+ Cut Edge could perfectly solve hump effect while turn-on; with Drain side POLY-CAP, lifetime could be drastically improved under NCS (Non-Conductive Stress) to sustain DC 10 years with comparable BV (Breakdown Voltage) and HCI (Hot Carrier Injection) lifetime.