Strip monolithic telescopes

Abstract

We present the characteristics of new monolithic silicon strip telescopes. By using suitable ion implantation techniques, the /spl Delta/E and residual energy stages of such telescopes have been integrated on the same silicon chip obtaining extremely thin /spl Delta/E stages of the order of 1 /spl mu/m. This allows to obtain a very low charge identification energy threshold. The strip structure and the intrinsic characteristics of the detector enable us to build position sensitive detectors with good x-y resolution.