RF MEMS resonator for CMOS back-end-of-line integration

Abstract

CMOS back-end-of-line (BEOL) compatible MEMS resonators were fabricated via a low-temperature process flow. The exural-mode resonator beams are made of a bi-layer consisting of a thin TaN and thick SiON 1m. DC measurements of pull-down voltage indicate limitations to operating voltages due to electric field breakdown across the bottom electrode to resonator beam gap. The RF response of the resonators shows resonant frequencies in the 11.0-11.6 MHz range with Q values of 2200.