Destructive single-event effects testing of the Intersil ISL70023SEH and ISL70024SEH gallium nitride power transistors

2017 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2017-07-01 DOI:10.1109/NSREC.2017.8115470

N. V. van Vonno, O. Mansilla, J. S. Gill, W. H. Newman, L. Pearce, E. Thomson

引用次数: 0

Abstract

We provide a brief discussion of the basic enhancement mode gallium nitride (GaN) power FET device structure and its performance and then report the results of destructive single-event effects (SEE) testing of the Intersil ISL70023SEH and ISL70024SEH GaN power transistors. We include a discussion of a conservative safe operating area (SOA) specification for both devices.

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Intersil ISL70023SEH和ISL70024SEH氮化镓功率晶体管的破坏性单事件效应测试

本文简要讨论了氮化镓(GaN)功率场效应晶体管的基本增强模式结构和性能，并报道了Intersil ISL70023SEH和ISL70024SEH GaN功率晶体管的破坏性单事件效应(SEE)测试结果。我们还讨论了这两种设备的保守安全操作区域(SOA)规范。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2017 IEEE Radiation Effects Data Workshop (REDW)

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