Effect of Schottky barrier contacts on measured capacitances in tunnel-FETs

Abstract

The influence of Schottky barriers at NiSi2 contacts of Si Planar p-TFETs on Ultrathin Body [1] is analyzed in terms of deviations between measurements, TCAD simulations and a proposed compact model for the intrinsic capacitances in TFETs presented in [2]. A theory for the reason of the deviations for the intrinsic capacitances is evolved and discussed. Additionally, TCAD simulations are performed to support the theory.