SOI MOSFET-based quantum tunneling device - FIBTET

Abstract

We have previously reported the controllable complementary n- and p-type negative-differential transconductance (NDT) characteristics of a FIBTET (field-induced band-to-band tunneling effect transistor) on a degenerately doped SOI MOSFET. In this work, we investigate key parameters of device design and demonstrate negative-differential conductance (NDC) as well as NDT characteristics in FIBTETs, which have a structure totally compatible with SOI MOSFETs. the critical dose condition distinguishing FIBTET from MOSFET has been found and room temperature NDC as well as NDT was demonstrated in a SOI MOSFET compatible tunnel device. The NDC combined with NDT characteristics of FIBTETs will give room for various analog and digital circuit applications based on Si technology.