Proposal of AlN-delta-GaN quantum well ultraviolet lasers

Abstract

The optical gain characteristics of AlN-delta-GaN quantum well are investigated for mid-ultraviolet (UV) lasers. The ultra-thin delta-GaN layer is inserted into AlN quantum well (QW) active region with AlN barrier layers. Large TE-polarized optical gain is achieved for AlN-delta-GaN QW structure at 253 nm. The peak emission wavelength can be adjusted by tuning the delta-GaN thickness while maintaining large optical gain for λ ~ 230-300 nm.