A discussion on SRAM forward/inverse problem analyses for RTN long-tail distributions

Worawit Somha, H. Yamauchi, Ma YuYu
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引用次数: 4

Abstract

This paper discusses, for the first time, how the statistical SRAM design analyses should be changed when: (1) the shift-amount of the time-dependent (TD) voltage margin variations (MV) after the screening test will become larger than that before and (2) the shapes of the MV distribution will change from the Gaussian to the complex mixtures of Gamma distributions. We discuss on the SRAM TD-MV analyses with not only the forward problem but also the inverse problem, i.e., deconvolution analyses. The proposed algorithm for the deconvolution to circumvent the issues caused by high-pass filtering behavior is discussed. Based on the proposed convolution /deconvolution design analyses, it has been shown for the first time that: (1) detecting the truncating point of the distributions of TD-MV by the screening test and (2) predicting the required the MV-shift-amount by the assisted circuit schemes to avoid the out of specs in the market during the life-time, etc, has become enabled based on the target specification.
RTN长尾分布的SRAM正/逆问题分析探讨
本文首次讨论了在以下情况下如何改变统计SRAM设计分析:(1)筛选试验后时变(TD)电压裕度变化(MV)的位移量将比筛选试验前变大;(2)MV分布的形状将从高斯分布转变为Gamma分布的复杂混合分布。我们不仅讨论了SRAM的正问题,而且讨论了逆问题,即反卷积分析。讨论了所提出的反褶积算法,以避免高通滤波行为引起的问题。基于所提出的卷积/反卷积设计分析,首次证明:(1)通过筛选测试检测TD-MV分布的截断点;(2)通过辅助电路方案预测所需的mv漂移量,以避免在寿命期内市场上的规格缺失等,已根据目标规格成为可能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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