A W-band SiGe 1.5V LNA for imaging applications

Abstract

This paper presents a 4-stage SiGe W-band amplifier for imaging applications designed in a 200 GHz ft SiGe BiCMOS process (IBM 8HP). The amplifier exhibits a gain of 19 dB at 85-89 GHz, a 3-dB bandwidth of 17 GHz, a NF of 8-10 dB over the measurement band, and consumes only 25 mW of DC power. The amplifier is very small (0.1 mm2 without pads), making it ideal for 8 or 16-element imaging arrays on a single chip. To our knowledge, this is the first demonstration of a high-gain, high-bandwidth W-band amplifier using SiGe technology.